5 SIMPLE TECHNIQUES FOR GERMANIUM

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the composition is cycled by means of oxidizing and annealing phases. As a result of preferential oxidation of Si in excess of Ge [sixty eight], the initial Si1–With improved effectiveness as a result of the higher absorption of ge